Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ADG751 | CMOS, Low Voltage, RF/Video, SPST Switch (Single Pole, Single Throw) | Analog-Devices | - | - | - | - | 120 K |
ADG752 | CMOS, Low Voltage, RF/ Video, SPDT Switch (Single Pole, Double Throw) | Analog-Devices | - | - | - | - | 131 K |
MA3G751 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
RFG75N05E | 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 53 K |
RHRG75100 | 75A, 700V - 1000V Hyperfast Diode | Intersil-Corporation | - | - | - | - | 61 K |
RHRG7560 | 75A, 600V Hyperfast Diode | Intersil-Corporation | - | - | - | - | 46 K |
RHRG7570 | 75A, 700V - 1000V Hyperfast Diode | Intersil-Corporation | - | - | - | - | 61 K |
RHRG7580 | 75A, 700V - 1000V Hyperfast Diode | Intersil-Corporation | - | - | - | - | 61 K |
RHRG7590 | 75A, 700V - 1000V Hyperfast Diode | Intersil-Corporation | - | - | - | - | 61 K |
RURG75120 | 75A, 1200V Ultrafast Diode | Intersil-Corporation | - | - | - | - | 32 K |
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