Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BSM300GA120DN2E3166 | 1200V/430A IGBT power module | Infineon-formely-Siemens | SINGLE SWITCH 1 | 5 | - | - | 126 K |
BSM300GA170DN2E3166 | 1700V/440A IGBT power module | Infineon-formely-Siemens | SINGLE SWITCH 1 | 5 | - | - | 124 K |
BSM400GA120DL | 1200V/680A IGBT power module | Infineon-formely-Siemens | SINGLE SWITCH | 5 | - | - | 115 K |
GA100 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 202 K |
GA101 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 202 K |
GA102 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 202 K |
GA102 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 202 K |
GA1L4Z | Hybrid transistor | NEC-Electronics-Inc- | - | - | - | - | 161 K |
GA1L4Z-T1 | Hybrid transistor | NEC-Electronics-Inc- | - | - | - | - | 161 K |
GA1L4Z-T2 | Hybrid transistor | NEC-Electronics-Inc- | - | - | - | - | 161 K |
[1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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