| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T0808C1D-GF70 | 70ns, 32Kx8 bit low low power CMOS static RAM | Samsung-Electronic | SOP | 28 | -40°C | 85°C | 170 K |
| K6T1008C2E-GF70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 190 K |
| K6T4008C1B-GF70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| MGF7124A | 1.9 GHz band amplifier MMIC | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -20°C | 90°C | 9 M |
| MGF7124A | 1.9 GHz band amplifier MMIC | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -20°C | 90°C | 9 M |
| MGF7168C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 77 K |
| MGF7169C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 351 K |
| MGF7170C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 316 K |
| MGF7175C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 20 | -30°C | 85°C | 22 K |
| MGF7176C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 20 | -30°C | 85°C | 22 K |
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