| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCW68GLT1 | 45 V, general purpose transistor | distributor | - | 3 | -55°C | 150°C | 52 K |
| BCX70GLT1 | 45 V, NPN general purpose transistor | distributor | - | 3 | -55°C | 150°C | 318 K |
| GLT7256L08-10TS | 10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM | distributor | TSOP | 28 | -40°C | 85°C | 842 K |
| GLT7256L08-12J3 | 12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM | distributor | SOJ | 28 | -40°C | 85°C | 842 K |
| GLT7256L08-12TS | 12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM | distributor | TSOP | 28 | -40°C | 85°C | 842 K |
| GLT7256L08-15J3 | 15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM | distributor | SOJ | 28 | -40°C | 85°C | 842 K |
| GLT7256L08-15TS | 15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM | distributor | TSOP | 28 | -40°C | 85°C | 842 K |
| GLT7256L08-8TS | 8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM | distributor | TSOP | 28 | -40°C | 85°C | 842 K |
| HY51VS18163HGLT-5 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power | distributor | TSOP II | 44 | 0°C | 70°C | 107 K |
| MMBV105GLT1 | 30 V, silicon tuning diode | distributor | - | 3 | - | - | 52 K |
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