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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HY51V18163HGLT-5Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low powerdistributorTSOP II440°C70°C107 K
HY51V18163HGLT-6Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low powerdistributorTSOP II440°C70°C107 K
HY51V18163HGLT-7Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low powerdistributorTSOP II440°C70°C107 K
HY51VS18163HGLT-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low powerdistributorTSOP II440°C70°C107 K
HY51VS18163HGLT-7Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low powerdistributorTSOP II440°C70°C107 K
HY57V641620HGLT-54 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHzdistributorTSOP II540°C70°C86 K
HY57V641620HGLT-554 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHzdistributorTSOP II540°C70°C86 K
HY57V641620HGLT-84 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 125 MHzdistributorTSOP II540°C70°C86 K
HY57V641620HGLT-K4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 133 MHzdistributorTSOP II540°C70°C86 K
HY57V641620HGLT-S4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 100 MHzdistributorTSOP II540°C70°C86 K
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