| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXGP7N60B | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 70 K |
| IXGP7N60C | 600V HiPerFET power IGBT | distributor | - | 3 | -55°C | 150°C | 50 K |
| K6T0808C1D-GP70 | 70ns, 32Kx8 bit low power CMOS static RAM | Samsung-Electronic | SOP | 28 | -40°C | 85°C | 170 K |
| K6T1008C2E-GP70 | 128Kx8 bit, 70ns low power CMOS static RAM | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 190 K |
| MGP7N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 118 K |
| MGP7N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 144 K |
| MGP7N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 122 K |
| STGP7NB60H | N-CHANNEL 7A - 600V TO-220 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STGP7NB60HD | N-CHANNEL 7A - 600V TO-220/TO-220FP POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 103 K |
| STGP7NB60HDFP | N-CHANNEL 7A - 600V TO-220/TO-220FP POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 103 K |
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