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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXGP7N60B600V HiPerFET power MOSFETdistributor-3-55°C150°C70 K
IXGP7N60C600V HiPerFET power IGBTdistributor-3-55°C150°C50 K
K6T0808C1D-GP7070ns, 32Kx8 bit low power CMOS static RAMSamsung-ElectronicSOP28-40°C85°C170 K
K6T1008C2E-GP70128Kx8 bit, 70ns low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
MGP7N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--118 K
MGP7N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--144 K
MGP7N80EInsulated gate bipolar transistorMotorola-3-55°C150°C122 K
STGP7NB60HN-CHANNEL 7A - 600V TO-220 POWERMESH IGBTSGS-Thomson-Microelectronics----86 K
STGP7NB60HDN-CHANNEL 7A - 600V TO-220/TO-220FP POWERMESH IGBTSGS-Thomson-Microelectronics----103 K
STGP7NB60HDFPN-CHANNEL 7A - 600V TO-220/TO-220FP POWERMESH IGBTSGS-Thomson-Microelectronics----103 K
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