| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSM100GT120DN2 | 1200V/150A IGBT power module | Infineon-formely-Siemens | TRIPACK | 21 | - | - | 180 K |
| BSM200GT120DN2 | 1200V/300A IGBT power module | Infineon-formely-Siemens | TRIPACK | 21 | - | - | 180 K |
| HGT1S2N120BNDS | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| HGT1S3N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 130 K |
| HGT1S3N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
| HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| M6MGT160S2BVP | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 258 K |
| M6MGT160S4BVP | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 257 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] |
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