Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IS61C256AH-10J | 32K x 8 high-speed CMOS static RAM | distributor | SOJ | 28 | 0°C | 70°C | 60 K |
IS61C256AH-10N | 32K x 8 high-speed CMOS static RAM | distributor | PDIP | 28 | 0°C | 70°C | 60 K |
IS61C256AH-10T | 32K x 8 high-speed CMOS static RAM | distributor | TSOP | 28 | 0°C | 70°C | 60 K |
LH5116H-10 | CMOS 16K (2K x 8)static RAM | Sharp | DIP | 24 | -40°C | 85°C | 87 K |
LH5164AH-10L | CMOS 64K (8K x 8)static RAM | Sharp | DIP | 28 | -40°C | 85°C | 105 K |
LH5164AH-10L | CMOS 64K (8K x 8)static RAM | Sharp | DIP | 28 | -40°C | 85°C | 105 K |
MD56V62160/H-10TA | 4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 305 K |
MH32D72KLH-10 | 2415919104-bit (33554432-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 342 K |
MH32D72KLH-10 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 348 K |
MH64D72KLH-10 | 4831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 350 K |
1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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