| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSH107 | 20 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 6 | -55°C | 150°C | 116 K |
| FH104 | NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 49 K |
| FH105 | NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 63 K |
| KH103 | Fast Settling, High Current Wideband Op Amp | Fairchild-Semiconductor | - | - | - | - | 363 K |
| SGH10N120RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 456 K |
| SGH10N120RUFD | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 511 K |
| SGH10N60RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 543 K |
| SGH10N60RUFD | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 598 K |
| SSH10N60B | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 680 K |
| STH10NC60FI | N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 337 K |
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