| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EH10002Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10004Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10006Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10008Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10010Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10010Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| ILH100 | Hermetic phototransistor optocoupler | Infineon-formely-Siemens | DIP8 | 8 | -55°C | 125°C | 215 K |
| OH10009 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| OH10010 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| OH10017 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 25 K |
| OH10023 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 26 K |
| [1] [2] [3] 4 [5] [6] [7] [8] |
|---|
