Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
IXFH12N100Q | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 118 K |
IXFH12N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 85°C | 54 K |
IXGH12N100 | 1000V low voltage high speed IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
IXGH12N100A | 1000V low voltage high speed IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
IXGH12N100AU1 | 1000V high voltage IGBT | distributor | - | 3 | -55°C | 150°C | 151 K |
IXGH12N100U1 | 1000V high voltage IGBT | distributor | - | 3 | -55°C | 150°C | 151 K |
IXGH12N60C | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 56 K |
IXTH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 106 K |
IXTH12N90 | 900V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 102 K |
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