| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16V725BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BWJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| MH16V725BWJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| R1170H161A-T1 | 800mA LDO regulator. Output voltage 1.6V. Built-in chip enable circuit, active at L. Taping type T1. | distributor | - | 5 | -40°C | 85°C | 261 K |
| R1170H161A-T2 | 800mA LDO regulator. Output voltage 1.6V. Built-in chip enable circuit, active at L. Taping type T2. | distributor | - | 5 | -40°C | 85°C | 261 K |
| R1170H161B-T1 | 800mA LDO regulator. Output voltage 1.6V. Built-in chip enable circuit, active at H. Taping type T1. | distributor | - | 5 | -40°C | 85°C | 261 K |
| R1170H161B-T1 | 800mA LDO regulator. Output voltage 1.6V. Built-in chip enable circuit, active at H. Taping type T1. | distributor | - | 5 | -40°C | 85°C | 261 K |
| R1170H161B-T2 | 800mA LDO regulator. Output voltage 1.6V. Built-in chip enable circuit, active at H. Taping type T2. | distributor | - | 5 | -40°C | 85°C | 261 K |
| R1170H161B-T2 | 800mA LDO regulator. Output voltage 1.6V. Built-in chip enable circuit, active at H. Taping type T2. | distributor | - | 5 | -40°C | 85°C | 261 K |
| R3111H161C-T1 | Low voltage detector. Detector threshold (-Vdet) 1.6V. Output type: CMOS | distributor | - | 3 | -40°C | 85°C | 205 K |
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