| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| H16C05A | Dual high efficiency power rectifiers, 50V, 16 Amperes, 50ns | distributor | - | 3 | -65°C | 150°C | 138 K |
| H16C05C | Dual high efficiency power rectifiers, 50V, 16 Amperes, 50ns | distributor | - | 3 | -65°C | 150°C | 138 K |
| IXBH16N170A | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -40°C | 150°C | 51 K |
| IXFH16N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 72 K |
| IXTH16P20 | 200V standard power MOSFET | distributor | - | 3 | -55°C | 150°C | 79 K |
| MT48H16M16LFFG-10 | 16Meg x 16 x 4 banks; 1.8V mobile SDRAM | distributor | FBGA | 54 | 0°C | 70°C | 1 M |
| MT48H16M16LFFG-8 | 16Meg x 16 x 4 banks; 1.8V mobile SDRAM | distributor | FBGA | 54 | 0°C | 70°C | 1 M |
| MT49H16M16FM-33 | 1Meg x 32 x 8 banks, DRAM | distributor | FBGA | 144 | 0°C | 70°C | 652 K |
| MT49H16M16FM-4 | 1Meg x 32 x 8 banks, DRAM | distributor | FBGA | 144 | 0°C | 70°C | 652 K |
| MT49H16M16FM-5 | 1Meg x 32 x 8 banks, DRAM | distributor | FBGA | 144 | 0°C | 70°C | 652 K |
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