| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS840FH18AT-10 | 10ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
| GS840FH18AT-10I | 10ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 634 K |
| GS840FH18AT-12 | 12ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
| GS840FH18AT-12I | 12ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 634 K |
| GS840FH18AT-8 | 8ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
| GS840FH18AT-8.5 | 8.5ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
| IXFH180N20 | 200V HiPerFET power MOSFET single die MOSFET | distributor | - | 4 | -55°C | 150°C | 71 K |
| PH1819-45A | 1805-1880 MHz,45 Watt, wireless power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 104 K |
| PH1819-90 | 1805-1880 MHz,90 Watt, wireless power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 108 K |
| STH18NB40FI | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 12.4 A Current Idm pulse 73.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 400 V Resistance Rds on 0.3 R | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
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