Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MWS11-PH22-CS | CDMA InGaP HBT Power Amplifier | Microsemi-Corporation | 16_PIN_MLP | - | - | - | 111 K |
R1170H221A-T1 | 800mA LDO regulator. Output voltage 2.2V. Built-in chip enable circuit, active at L. Taping type T1. | distributor | - | 5 | -40°C | 85°C | 261 K |
R3111H221A-T1 | Low voltage detector. Detector threshold (-Vdet) 2.2V. Output type: Nch open drain. | distributor | - | 3 | -40°C | 85°C | 205 K |
R3111H221C-T1 | Low voltage detector. Detector threshold (-Vdet) 2.2V. Output type: CMOS | distributor | - | 3 | -40°C | 85°C | 205 K |
RTH22ES820J | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
RTH22ES820J | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
RTH22ES820K | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
RTH22ES821J | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
RTH22ES821K | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
RTH22ES822J | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
RTH22ES822K | Sensistor | Microsemi-Corporation | TM | - | - | - | 193 K |
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