| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS820H32T-138 | 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 342 K |
| GS820H32T-150 | 150MHz 9ns 64K x 32 2M synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 342 K |
| HTZ80H32K | 32000V high voltage diode rectifier module | distributor | - | 4 | - | - | 155 K |
| IXFH32N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 110 K |
| IXFH32N50Q | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 110 K |
| IXGH32N60AA | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 175°C | 44 K |
| IXGH32N60AS | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 175°C | 44 K |
| IXGH32N60BD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 69 K |
| IXGH32N60C | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 117 K |
| IXGH32N60CD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 138 K |
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