| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IR51H320 | Self-oscillating half-bridge | International-Rectifier | SIP | 7 | -55°C | 150°C | 181 K |
| PTH32003 | 25 watts, 1.9-2.0 GHz 50-Ohm high-gain power hybrid | Ericsson-Microelectronics | - | 4 | - | - | 420 K |
| SFH320FA-3 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 188 K |
| SFH320FA-4 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 188 K |
| SFH325 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 278 K |
| SFH325-3 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 278 K |
| SFH325-4 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 278 K |
| SFH325FA | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 278 K |
| SFH325FA-3 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 278 K |
| SFH325FA-4 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 278 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
|---|
