Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS840H36AB-100 | 100MHz 12ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 910 K |
GS840H36AB-100I | 100MHz 12ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 910 K |
GS840H36AB-150 | 150MHz 10ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 910 K |
GS840H36AB-150I | 150MHz 10ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 910 K |
GS840H36AB-166 | 166MHz 8.5ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 910 K |
GS840H36AB-166I | 166MHz 8.5ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 910 K |
GS840H36AB-180 | 180MHz 8ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 910 K |
GS840H36AB-180I | 180MHz 8ns 128K x 36 4Mb sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 910 K |
H36-1 | Pd=500mW, Vz=34.95V zener diode | distributor | - | - | - | - | 107 K |
H36-1 | Pd=500mW, Vz=34.95V zener diode | distributor | - | - | - | - | 107 K |
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