Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CPH5601 | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 42 K |
CPH5602 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 42 K |
K4H560438B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
K4H560438B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
ZSH560C | Supply voltage monitor | Zetex-Semiconductor | - | 3 | -40°C | 85°C | 114 K |
ZSH560C | Supply voltage monitor | Zetex-Semiconductor | - | 3 | -40°C | 85°C | 114 K |
ZSH560G | Supply voltage monitor | Zetex-Semiconductor | SOT | 4 | -40°C | 85°C | 114 K |
ZSH560G | Supply voltage monitor | Zetex-Semiconductor | SOT | 4 | -40°C | 85°C | 114 K |
ZSH560N8 | Supply voltage monitor | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 114 K |
ZSH560N8 | Supply voltage monitor | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 114 K |
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