| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CPH6402 | N-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 95 K |
| CPH6403 | N-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 85 K |
| CPH6404 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 41 K |
| CPH6406 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 41 K |
| MCH6402 | Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 27 K |
| MCH6405 | Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 27 K |
| MH64D64AKQH-10 | 4294967296-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 362 K |
| MH64D64AKQH-75 | 4294967296-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 362 K |
| MH64S72VJG-6 | 4831838208-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 958 K |
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