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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962H9684502QXADual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose H. Federal stock class designator: no options.distributorPGA68-55°C125°C496 K
5962H9684503QXADual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose H. Federal stock class designator: no options.distributorPGA68-55°C125°C496 K
5962H9689103VYARadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689103VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689103VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689103VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104QYARadiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104QYXRadiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104VYXRadiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
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