| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KK90HB40 | 1200V Thyristor module | SanRex-Sansha-Electric-Mfg--Co--Ltd- | - | 7 | -40°C | 125°C | 624 K |
| PHB44N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 65 K |
| PHB45N03LT | 30 V, TrenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 49 K |
| PHB45N03LTA | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 298 K |
| PHB45NQ10T | 100 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 110 K |
| PHB47NQ10T | 100 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 267 K |
| PHB4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHB4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHB4N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 80 K |
| PHB4ND40E | 400 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 65 K |
| [1] [2] 3 [4] [5] |
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