| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16S64PHC-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
| MH16S64PHC-7 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
| MH16S64PHC-8 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
| MH16S72PHC-10 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH16S72PHC-7 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH16S72PHC-8 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH8S64PHC-7 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 588 K |
| QM200HC-M | 200A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 72 K |
| QM300HC-M | 300A - transistor module for medium power switching use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 64 K |
| QM30HC-2H | 30A - transistor module for induction heater use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 57 K |
| [1] 2 [3] [4] [5] [6] |
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