| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY-2 | Thyratron. Peak anode voltage epy 8kV, peak anode current ib 100a, average anode current lb 0.1 Adc, RMS anode current lb 2 Aac. Seated height x tube width 2.35 x 1.0 inches. | distributor | - | 4 | - | - | 49 K |
| HY-6 | Thyratron. Peak anode voltage epy 16 kV, peak anode current ib 350 a, average anode current lb 0.5 Adc, RMS anode current lb 6.5 Aac. Seated height x tube width 2 x 1.4 inches. | distributor | - | 4 | - | - | 49 K |
| HY-60 | Thyratron. Peak anode voltage epy 16 kV, peak anode current ib 350 a, average anode current lb 0.5 Adc, RMS anode current lb 6.5 Aac. Seated height x tube width 2.4 x 1.4 inches. | distributor | - | 4 | - | - | 49 K |
| QM100HY-2H | 100A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 79 K |
| QM100HY-H | 100A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 78 K |
| QM150HY-2H | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 70 K |
| QM150HY-H | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 79 K |
| QM30HY-2H | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 70 K |
| QM30HY-2H | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 70 K |
| QM50HY-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 68 K |
| 1 [2] [3] |
|---|
