Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM681000BLGI-10 | 128K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 192 K |
KM681000BLRI-10 | 128K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | TSOP R | 32 | -40°C | 85°C | 192 K |
KM681000BLRI-10L | 128K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | TSOP R | 32 | -40°C | 85°C | 192 K |
KM681000BLTI-10 | 128K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | TSOP F | 32 | -40°C | 85°C | 192 K |
KM681000BLTI-10L | 128K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | TSOP F | 32 | -40°C | 85°C | 192 K |
KM681000BLTI-10L | 128K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | TSOP F | 32 | -40°C | 85°C | 192 K |
PEEL18CV8JI-10 | 7ns CMOS programmable electrically erasable logic device | distributor | PLCC | 20 | -40°C | 85°C | 397 K |
PEEL18CV8PI-10 | 10ns CMOS programmable electrically erasable logic device | distributor | PDIP | 20 | -40°C | 85°C | 397 K |
PEEL18CV8SI-10 | 10ns CMOS programmable electrically erasable logic device | distributor | SOIC | 20 | -40°C | 85°C | 397 K |
PEEL18CV8TI-10 | 10ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 20 | -40°C | 85°C | 397 K |
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