| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CL8282TI100-3 | Laser-configured ASIC | distributor | TQFP | 100 | -40°C | 85°C | 115 K |
| DI100 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current (Ta=40degC) 1.0A. | distributor | DIP | 4 | -55°C | 125°C | 45 K |
| DI100 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current (Ta=40degC) 1.0A. | distributor | DIP | 4 | -55°C | 125°C | 45 K |
| EPC16QI100 | Enhanced configuration devices, 16-Mbit | distributor | PQFP | 100 | -40°C | 100°C | 379 K |
| EPC8QI100 | Enhanced configuration devices, 8-Mbit | distributor | PQFP | 100 | -40°C | 100°C | 379 K |
| MDI100-12A3 | 1200V IGBT module | distributor | - | 7 | - | - | 118 K |
| MII100-12A3 | 1200V IGBT module | distributor | - | 7 | - | - | 118 K |
| MWI100-06A8 | 600V IGBT module | distributor | - | 17 | -55°C | 150°C | 68 K |
| MWI100-12A8 | 1200V IGBT module | distributor | - | 17 | -55°C | 150°C | 887 K |
| MWI100-12E8 | 1200V IGBT module | distributor | - | 17 | -55°C | 150°C | 71 K |
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