| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HTIP31C | 5V 3A NPN epiataxial planar transistor for use in general purpose amplifier and switching applications | distributor | - | 3 | - | - | 33 K |
| HTIP32C | 5V 3A PNP epiataxial planar transistor for use in general purpose amplifier and switching applications | distributor | - | 3 | - | - | 32 K |
| TIP31C | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP32C | PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP36A | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP36B | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP36C | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
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