| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF840 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
| IRF840 | N-channel HEXFET, 500V, 8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 334 K |
| IRF840F1 | N-channel HEXFET, 500V, 4.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 334 K |
| IRF841 | N-channel HEXFET, 450V, 8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 334 K |
| IRF841F1 | N-channel HEXFET, 450V, 4.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 334 K |
| IRFP250 | N-channel power MOSFET, 200V, 30A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP251 | N-channel power MOSFET, 150V, 30A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP252 | N-channel power MOSFET, 200V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP253 | N-channel power MOSFET, 150V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFS644B | N-channel power MOSFET, 250V, 14A | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 900 K |
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