| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF644N | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF644NL | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF644NL | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF644NS | N-channel power MOSFET, 250V, 14A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 123 K |
| IRF644S | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 150°C | 219 K |
| IRF644STRL | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 150°C | 219 K |
| IRF644STRL | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 150°C | 219 K |
| IRF7303 | Power MOSFET for fast switching applications, 30V, 4.9A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
| IRF7476 | Power MOSFET for high frequency applications, 12V, 15A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
| IRF840 | N-channel HEXFET, 500V, 8A | Samsung-Electronic | - | 3 | -55°C | 150°C | 272 K |
| IRF841 | N-channel HEXFET, 450V, 8A | Samsung-Electronic | - | 3 | -55°C | 150°C | 272 K |
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