| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF530 | N-channel MOSFET, 100V, 14A | Motorola | - | 3 | -55°C | 150°C | 157 K |
| IRF531 | N-channel MOSFET, 60V, 14A | Motorola | - | 3 | -55°C | 150°C | 157 K |
| IRF532 | N-channel MOSFET, 100V, 12A | Motorola | - | 3 | -55°C | 150°C | 157 K |
| IRF533 | N-channel MOSFET, 60V, 12A | Motorola | - | 3 | -55°C | 150°C | 157 K |
| IRF9531 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9532 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9533 | P-channel MOSFET, 60V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP460 | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 94 K |
| IRFP9131 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9132 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
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