| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF640N | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF640NL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF640NL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF640NS | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 155 K |
| IRF640NSTR | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 155 K |
| IRF820 | N-channel MOSFET, 500V, 2.5A | Motorola | - | 3 | -55°C | 150°C | 140 K |
| IRF820 | N-channel MOSFET, 500V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | Motorola | - | 3 | -55°C | 150°C | 140 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF822 | N-channel MOSFET, 500V, 2.2A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF823 | N-channel MOSFET, 450V, 2.2A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
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