| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1310S | HEXFET power MOSFET | International-Rectifier | - | 3 | -55°C | 175°C | 361 K |
| IRF530N | 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 125 K |
| IRF540N | 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 126 K |
| IRFD214 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 497 K |
| IRFD224 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 467 K |
| IRFD310 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 459 K |
| IRFD320 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 478 K |
| IRFD420 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 468 K |
| IRFP150N | 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 127 K |
| IRFR9024 | P-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 379 K |
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