| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 195 K |
| IRFI730G | 400V HEXFET power MOSFET | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
| IRFY240C | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY340 | 400V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY430 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 18 K |
| IRFY430M-T257 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AA | - | - | - | 20 K |
| IRFY440 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY9130 | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY9140 | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY9140C | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
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