| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 123 K |
| IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 211 K |
| IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 146 K |
| IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 146 K |
| IRF1104 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 101 K |
| IRF1310N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | - | 3 | -55°C | 175°C | 96 K |
| IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
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