| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | Fairchild-Semiconductor | - | - | - | - | 56 K |
| IRF510 | N-channel power MOSFET, 100V, 5.6A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
| IRF634 | Power MOSFET | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
| IRF634A | Power MOSFET, 250V, 8.1A, Rds(on)=0.45 Ohm | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 224 K |
| IRF820 | N-channel enhancement mode power MOS transistor, 500V, 3.0A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRFZ34N | Power MOSFET | International-Rectifier | - | 3 | -55°C | 175°C | 195 K |
| IRFZ46 | Power MOSFET | International-Rectifier | - | 3 | -55°C | 175°C | 165 K |
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