| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF820 | N-channel enhancement mode power MOS transistor, 500V, 3.0A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRF830 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 58 K |
| IRF830 | 500 V, 4.5 A, power field effect transistor | distributor | TO | 3 | -55°C | 150°C | 282 K |
| IRF840 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
| IRF840F1 | N-channel HEXFET, 500V, 4.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 334 K |
| IRF840S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| IRF841F1 | N-channel HEXFET, 450V, 4.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 334 K |
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