Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRG4PH50K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 92 K |
IRG4PH50KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 224 K |
IRG4PH50S | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A | International-Rectifier | - | 3 | -55°C | 150°C | 130 K |
IRG4PH50U | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 134 K |
IRG4PH50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
IRG4PSC71K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A | International-Rectifier | - | 3 | -55°C | 150°C | 152 K |
IRG4PSC71KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A | International-Rectifier | - | 3 | -55°C | 150°C | 196 K |
IRG4PSC71U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A | International-Rectifier | - | 3 | -55°C | 150°C | 151 K |
IRG4PSC71UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A | International-Rectifier | - | 3 | -55°C | 150°C | 253 K |
IRG4PSH71KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A | International-Rectifier | - | 3 | -55°C | 150°C | 200 K |
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