Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFBA90N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A | International-Rectifier | - | 3 | -55°C | 175°C | 98 K |
IRFBC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
IRFBC20L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 355 K |
IRFBC30 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
IRFBC30A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 101 K |
IRFBC30AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 147 K |
IRFBC30L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
IRFBC30S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 362 K |
IRFBC40A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 97 K |
IRFBC40AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 111 K |
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