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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFBC40LHEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2AInternational-Rectifier-3-55°C150°C350 K
IRFBC40LHEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2AInternational-Rectifier-3-55°C150°C350 K
IRFBC40SHEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2AInternational-RectifierDDPak3-55°C150°C350 K
IRFBE20HEXFET power MOSFET. VDSS = 800V, RDS(on) = 6.5 Ohm, ID = 1.8AInternational-Rectifier-3-55°C150°C171 K
IRFBE30HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1AInternational-Rectifier-3-55°C150°C167 K
IRFBF20HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7AInternational-Rectifier-3-55°C150°C168 K
IRFBF20LHEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7AInternational-Rectifier-3-55°C150°C311 K
IRFBF20SHEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7AInternational-RectifierDDPak3-55°C150°C311 K
IRFBF30HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6AInternational-Rectifier-3-55°C150°C166 K
IRFBG20HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4AInternational-Rectifier-3-55°C150°C169 K
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