| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP131 | N-channel MOSFET, 80V, 14A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP132 | N-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP132 | N-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP3206PBF | 60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package | International-Rectifier | - | | - | - | 297 K |
| IRFP460 | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 94 K |
| IRFP460 | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 94 K |
| IRFP9130 | P-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9131 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9132 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9133 | P-channel MOSFET, 60V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
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