Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | -- |
IRF640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 61 K |
IRF640 | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
IRF640 | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 95 K |
IRF640 | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
IRF640B | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 916 K |
IRF640FP | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
IRF640L | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 228 K |
IRF640L | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 228 K |
IRF640S | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT404 | - | - | - | 95 K |
IRF640S | N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
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