| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MI-J2NIA | Input voltage:28V; outputV:18.5V; 10W; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -40°C | 100°C | 86 K |
| MI-J2NIY | Input voltage:28V; outputV:18.5V; 50W; 10A; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -40°C | 100°C | 86 K |
| MI-J2NIZ | Input voltage:28V; outputV:18.5V; 25W; 5A; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -40°C | 100°C | 86 K |
| MI-J2NMA | Input voltage:28V; outputV:18.5V; 10W; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -55°C | 100°C | 86 K |
| MI-J2NMY | Input voltage:28V; outputV:18.5V; 50W; 10A; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -55°C | 100°C | 86 K |
| MI-J2NMZ | Input voltage:28V; outputV:18.5V; 25W; 5A; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -55°C | 100°C | 86 K |
| PJ2N9014CT | 50V; 100mA NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 102 K |
| PJ2N9014CX | 50V; 100mA NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 102 K |
| PJ2N9015CT | 50V; 100mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 188 K |
| PJ2N9015CX | 50V; 100mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 188 K |
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