| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA3J741 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 44 K |
| MA3J741D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3J741E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3J742 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| MA3J744 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
| MA3J745 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
| MA3J745D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 44 K |
| MA3J745E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MI-J74MA | Input voltage:165V; outputV:48V; 10W; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -55°C | 100°C | 86 K |
| MI-J74MZ | Input voltage:165V; outputV:48V; 25W; 5A; military DC-DC converter. For military applications utilizing distributed power architectures | distributor | - | 9 | -55°C | 100°C | 86 K |
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