Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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28C64AJC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
28LV256JC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
28LV256JC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
28LV256JC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
28LV64JC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
28LV64JC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
28LV64JC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
28LV64JC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
29C010JC-1 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. | distributor | PLCC | 32 | 0°C | 70°C | 52 K |
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