| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MJD122 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD122-1 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD122T4 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD127 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD127 | PNP transistor, 100V, 8A | Samsung-Electronic | - | 3 | -65°C | 150°C | 194 K |
| MJD127-1 | PNP transistor, 100V, 8A | Samsung-Electronic | IPAK | 3 | -65°C | 150°C | 194 K |
| PJD1616ACT | 120V; 1A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 220 K |
| PJD1616ACX | 120V; 1A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 220 K |
| PJD1616CCT | 120V; 0.5A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 953 K |
| PJD1616CCX | 120V; 0.5A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 953 K |
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