| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MJD112 | Darlington Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 394 K |
| MJD112L | Darlington Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 394 K |
| MJD122-1 | NPN darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
| MJD122T4 | NPN darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
| MJD127 | PNP darlington transistor for high DC current gain, 100V, 8A | Samsung-Electronic | - | 3 | -65°C | 150°C | 194 K |
| MJD127-1 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD127-1 | PNP darlington transistor for high DC current gain, 100V, 8A | Samsung-Electronic | - | 3 | -65°C | 150°C | 194 K |
| MJD127-1 | PNP darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
| MJD127T4 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD127T4 | PNP darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
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