| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HMJE3055T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | distributor | - | 3 | - | - | 35 K |
| MJE3055T | NPN Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 36 K |
| MJE3055T | 60V complementary silicon power transistor | distributor | - | 3 | -55°C | 150°C | 123 K |
| MJE3055T | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. | distributor | - | 3 | -65°C | 150°C | 48 K |
| MJE3055T | Silicon epitaxial planar transistor, for use in audio and general purpose. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 64 K |
| MJE340 | Plastic medium power NPN silicon transistor | Motorola | - | 3 | -65°C | 150°C | 117 K |
| MJE341 | Plastic medium power NPN silicon transistor | Motorola | - | 3 | -65°C | 150°C | 130 K |
| MJE3439 | NPN silicon high-voltage power transistor | Motorola | - | 3 | -65°C | 150°C | 100 K |
| MJE344 | Plastic medium power NPN silicon transistor | Motorola | - | 3 | -65°C | 150°C | 130 K |
| MJE350 | Plastic medium power NPN silicon transistor | Motorola | - | 3 | -65°C | 150°C | 124 K |
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