Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK2134 | N-channel power MOS FET for high voltage switching applications | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 54 K |
2SK2134-Z | N-channel power MOS FET for high voltage switching applications | NEC-Electronics-Inc- | - | 4 | -55°C | 150°C | 54 K |
GPTK2126 | 1600 V phase controlled SCR | distributor | - | - | - | - | 38 K |
IXFK21N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 98 K |
IXFK21N100Q | 1000V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 150°C | 98 K |
IXTK21N100 | 600V high voltage megaMOS FET | distributor | - | 3 | -55°C | 150°C | 137 K |
LLNRK21/4 | POWR-PRO dual-element, time-delay class RK1 fuse. 2 1/4 A. Voltage rating: 250 VAC 125 VDC. Interrupting rating: AC: 200,000 A rms symmetrical, 300,000 A rms symmetrical (littelfuse self-certified), DC: 20,000 A. | distributor | - | 2 | - | - | 189 K |
SK210 | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 2.0 A. | distributor | - | 2 | -50°C | 125°C | 58 K |
SK210 | 100 V, 2.0 A surface mount schottky barrier rectifier | distributor | SMB | 2 | -50°C | 125°C | 84 K |
SK210 | 100 V, 2 A, surface mount schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 173 K |
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