Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KDS187 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 106 K |
KDS190 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 105 K |
KDS193 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 104 K |
KDS196 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 200 K |
KDS200 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 105 K |
KDS201 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 108 K |
KDS2236M | Silicon diode for AFC applications for FM receiver | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 199 K |
KDS2236S | Silicon diode for AFC applications for FM receiver | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 199 K |
KDS226 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 206 K |
MF-10KDS-12T-060 | Transmitter | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 10°C | 65°C | 104 K |
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