Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KSP24 | VHF transistor, NPN, collector-emitter=30V, collector power dissipation=350 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 48 K |
KSP25 | NPN darlington transistor, collector-emitter=40V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 32 K |
KSP26 | NPN darlington transistor, collector-emitter=50V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 32 K |
KSP27 | NPN darlington transistor, collector-emitter=60V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 32 K |
KSP2907A | General purpose transistor, PNP, collector-emitter=60V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 35 K |
KSP44 | High voltage NPN transistor, collector-emitter=400V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 73 K |
KSP45 | High voltage NPN transistor, collector-emitter=350V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 73 K |
KSP5179 | High frequency NPN transistor, 2000 MHz, collector-emitter=12V, collector power dissipation=300 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 26 K |
KSP55 | Amplifier transistor, PNP, collector-emitter=60V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 34 K |
KSP56 | Amplifier transistor, PNP, collector-emitter=80V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 34 K |
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